plaats van herkomst
United States
naam van het merk
Original
modelnummer
SI7844DP-T1-GE3
Technology
MOSFET (MetalOxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.4A
Rds On (Max) @ Id, Vgs
22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
Standard
Current Transfer Ratio (Max)
Standard37
Serial Interfaces
Standard31
Current - Peak Output
Standard29
Voltage - Off State
Standard38
Current Transfer Ratio (Min)
Standard36
Frequency - Switching
Standard21
Voltage - Supply (Max)
Standard15
Voltage - Output
Standard32
Resistance (Ohms)
Standard26
Operating Temperature
Standard16
Static dV/dt (Min)
Standard39
Voltage - Supply (Min)
Standard14
Voltage - Isolation
Standard33
Current - LED Trigger (Ift) (Max)
Standard40
Voltage - Breakdown
Standard20
Current - Supply
Standard27
Size / Dimension
Standard34
Current - Output / Channel
Standard23
Frequency - Max
Standard19
Current - DC Forward (If) (Max)
Standard35
Current - Output High, Low
Standard28
Current - On State (It (RMS)) (Max)
Standard41
